A lateral capacitive CMOS accelerometer with structural curl compensation
Conference Paper, Proceedings of 12th IEEE International Conference on Micro Electro Mechanical Systems (MEMS '99), pp. 606 - 611, 1999
Abstract
We present successful experimental results from the first lateral capacitive accelerometer to be designed and manufactured in a conventional CMOS process. Compatibility with conventional CMOS provides advantages of low cost, high yield and fast prototyping that should be transferable to any CMOS foundry. A fully differential capacitive-bridge interface which cannot be realized in polysilicon technology is designed and implemented. Out-of-plane curling associated with the composite structural layers is compensated to first order through a curl matching technique. The prototype accelerometer has a measured sensitivity of 1.2 mV/g and a 0.5 mg//spl radic/Hz noise floor at the output of the sensing element.
BibTeX
@conference{Zhang-1999-14841,author = {G. Zhang and Huikai Xie and L. E. de Rosset and Gary K. Fedder},
title = {A lateral capacitive CMOS accelerometer with structural curl compensation},
booktitle = {Proceedings of 12th IEEE International Conference on Micro Electro Mechanical Systems (MEMS '99)},
year = {1999},
month = {January},
pages = {606 - 611},
}
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