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Abstract

This paper reports a lateral CMOS-MEMS accelerometer with a measured noise floor of 1 mG//spl radic/(Hz) and a dynamic range larger than 13 G. The accelerometer is fully compatible with conventional CMOS processes enabling the integration of most of the conditioning circuits. It is fabricated in a three metal layer 0.5 /spl mu/m CMOS process followed by a two-step dry etch release. An improved curl matching technique is utilized to solve the out-of-plane curl problem. A new differential amplifier is used for the capacitive sensing interface. The CMOS micromachining process used in this project is described. The design of accelerometer, system schematic applying force-balance feedback and experimental test results are presented.

Notes

Associated Lab(s) / Group(s): Microelectromechanical Systems Laboratory

Text Reference

Hao Luo, Gary Fedder, and Richard Carley, "A 1 mG lateral CMOS-MEMS accelerometer," Proceedings of The 13th IEEE International Conference on Micro Electro Mechanical Systems (MEMS '00), January, 2000, pp. 502 - 507.

BibTeX Reference

@inproceedings{Luo_2000_3638,
   author = "Hao Luo, Gary Fedder, and Richard Carley",
   title = "A 1 mG lateral CMOS-MEMS accelerometer",
   booktitle = "Proceedings of The 13th IEEE International Conference on Micro Electro Mechanical Systems (MEMS '00)",
   pages = "502 - 507",
   month = "January",
   year = "2000",
}

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